Nanoelectromechanical model based on classical molecular dynamics method was combined with continuum electric models including charge transfer model to apply dual-gate nanoelectromechanical nanotube memory that could be characterized by carbon nanotube bending performance by both atomistic capacitive and interatomic forces. We performed molecular dynamics simulations for a suspended (5,5) nanotube with the length of 11.567 nm (L_CNT) and the separation length of 0.9 ~ 1.5 nm (H). After the nanotube collided on the gold surface, the nanotube oscillated on the gold surface with amplitude of ~1 À, and the amplitude gradually decreased. When H ≤1.3 nm, the nanotube-bridge continually contacted with the gold surface after the first collision. As H increased, the threshold voltage linearly increased. When H /L_CNT was below 0.13, the electromechanical nanotube memories were nonvolatile memory devices, whereas the electromechanical nanotube memories were volatile memories or switching devices when H /L_CNT was above 0.14.