200nm-thick Ni_xFe_100-x (x=6, 21, 33, and 76) films were deposited on SiO2/Si(100) substrates at room temperature by DC magnetron sputtering. The films were annealed at 753 K in vacuum. The grain size of the as-deposited films is smaller than 50 nm. Magnetoresistance was measured at 10 K and 300 K and resistance was measured from 10 K to 300 K using a Cryogen-Magnet system with four-point probe. The magnetoresistance of the Ni_xFe_100-x films increases with increasing Ni content and could be improved by the annealing. However the effect of annealing on magnetoresistance is markedly weakened by decreasing Ni content. For all the Ni_xFe_100-x films, the variation of resistance (or resistivity) with temperature can be explained in terms of the scattering of impurities and defects, the electron-phonon scattering and the spin-disorder scattering of electron. The resistance (or resistivity)-temperature curve shows the linear region in the range of the relatively high temperature. The annealing improves the structure of the films, increasing the temperature coefficient of resistance of the films.