Title |
Progress of Si nanostructures used for the Si-based light sources |
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Author |
Yingcai PENG1,2,*, Xinwei ZHAO3, Guangsheng FU4 |
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Institute
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1. College of Electronic and Informational Engineering, Hebei University, Baoding 071002, P. R. China 2. Key Laboratory of Semiconductor Material Science, Institute of Semiconductor, Chinese Academy of Science, Beijing 100083, China 3. Department of Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan 4. College of Physical Science and Technology, Hebei University, Baoding 071002, P. R. China |
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Keywords: |
Si nanostructures; light sources; integrated optoelectronics; optical communications |
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| Abstract | Si-based photonic devices have recently attracted much attention owing to their potential applications in the optical communication fields. The achievement of Si light sources such as Si light emitting diode (LED) and Si laser is the most challenging task in the Si-based photonic integration. The key of the study is how to achieve efficient light emission, optical gain and stimulated emission in various Si nanostructures. In this paper, the applications and progress of Si nanostructures in the Si-based light sources are reviewed. |
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