Title |
Study on Cu-X-N (X= Al, Fe and La) films prepared by reactive magnetron sputtering |
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Author |
Xing'ao LI1,2,*, Zuli LIU1, Zuobin YUAN2, Anyou ZUO2, Jianping YANG2, Kailun YAO1 |
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1. Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, P.R. China
2. Department of Physics, Hubei Institute for Nationalities, Enshi, 445000, P.R. China
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Keywords:
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copper nitride film; magnetron sputtering; X-ray diffraction; resistivity |
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| Abstract |
By reactive magnetron sputtering of a pure Cu and a pure Al, Fe, La target, Cu3N film and Cu-Al-N, Cu-Fe-N, Cu-La-N films were prepared on glass, respectively, at 0.5 Pa N2 partial pressure and 100¡æ substrate temperature. X-ray diffraction measurements showed that Cu3N film was composed of Cu3N crystallites with anti-ReO3 structure and prefer to be [111]-oriented. The Al-doped copper nitride film (Cu-Al-N) with very weak diffraction peak preferred to being [111]-oriented, too. XRD showed that the Fe-doped copper nitride film (Cu-Fe-N) and the La-doped copper nitride film (Cu-La-N) were amorphous. The resistivities of Cu-X-N films (X=Al, Fe and La) were higher than that of Cu3N film. |
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