Title
Study on Cu-X-N (X= Al, Fe and La) films prepared by reactive magnetron sputtering
Author
Xing'ao LI1,2,*, Zuli LIU1, Zuobin YUAN2, Anyou ZUO2, Jianping YANG2, Kailun YAO1
Institute
1. Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, P.R. China
2. Department of Physics, Hubei Institute for Nationalities, Enshi, 445000, P.R. China
Keywords:
copper nitride film; magnetron sputtering; X-ray diffraction; resistivity
Abstract

By reactive magnetron sputtering of a pure Cu and a pure Al, Fe, La target, Cu3N film and Cu-Al-N, Cu-Fe-N, Cu-La-N films were prepared on glass, respectively, at 0.5 Pa N2 partial pressure and 100¡æ substrate temperature. X-ray diffraction measurements showed that Cu3N film was composed of Cu3N crystallites with anti-ReO3 structure and prefer to be [111]-oriented. The Al-doped copper nitride film (Cu-Al-N) with very weak diffraction peak preferred to being [111]-oriented, too. XRD showed that the Fe-doped copper nitride film (Cu-Fe-N) and the La-doped copper nitride film (Cu-La-N) were amorphous. The resistivities of Cu-X-N films (X=Al, Fe and La) were higher than that of Cu3N film.

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