Title |
Progress of quantum-dot photoelectronic devices |
Author |
Yingcai PENG1,2,*, Xinwei ZHAO3, Guangsheng FU4 |
Institute
|
1. College of Electronic and
Informational Engineering, Hebei University, Baoding 071002, P.R. China; 2. Key Laboratory of Semiconductor Material Science, Institute of Semiconductor, Chinese Academy of Science, Beijing 100083, P.R. China; 3. Department of Physics, Tokyo University of Science, 1-3 kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan; 4. College of Physical Science and Technology, Hebei University, Baoding 071002, P.R. China. |
|
Keywords:
|
quantum-dots; self-assembling growth; photoelectronic devices;
operating performances |
| Abstract | Quantum-dot photoelectronic devices are quantum-dot lasers, quantum-dot infrared photodetectors, quantum-dot single-photon sources and quantum-dot optical memory designed and fabricated using quantum-dot microstructures as active regions of the devices, and they have potential applications in optical communication, optical informational process and optoelectronic computer. In this paper, recent progress on the fabricated methods and operating properties of these photoelectronic devices are reviewed, and new developed directions of the field are also predicated. |
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